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| smd type www.kexin.com.cn 1 diodes so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 high voltage double diode BAW101S features small plastic smd package high switching speed: max. 50 ns high continuous reverse voltage: 300 v electrically insulated diodes. absolute maximum ratings ta = 25 parameter symbol conditions min max unit 300 series connection 600 300 series connection 600 single diode loaded; 250 double diode loaded; 140 repetitive peak forward current i frm 625 ma non-repetitive peak forward current i fsm square wave; t j =25 prior to surge;t = 1 s 4.5 a total power dissipation p tot ts = 25 350 mw storage temperature t stg -65 +150 junction temperature t j 150 operating ambient temperature t amb -65 +150 thermal resistance from junction to soldering point r th j-s 255 k/w thermal resistance from junction to ambient r th j-a 357 k/w per diode continuous forward current i f continuous reverse voltage v r v repetitive peak forward current v rrm v ma
smd type diodes 2 www.kexin.com.cn BAW101S electrical characteristics ta = 25 parameter symbol conditions min max unit reverse breakdown voltage v br(r) i r = 100 a 300 forward voltage v f i f = 100 ma; note 1 1.1 mv v r = 25 v 150 na v r = 250 v; t amb = 150 50 a when switched from i f =30matoi r =30ma; r l = 100 ; measured at i r =3ma; diode capacitance c d v r =0;f=1mhz; 2 pf note 1. pulse test: pulse width = 300 s; ? = 0.02. 50 ns reverse current i r reverse recovery time t rr marking marking k2 |
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